Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-004-4009 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: UM6601B, 619691901, 619691-901, 619691901, 619691-901, 5961-01-004-4009, 01-004-4009, 5961010044009, 010044009
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 15, 2004 | 01-004-4009 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-004-4009
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| UM6601B | 12969 | MICRO USPD INC |
| 619691-901 | 50101 | MICROSEMI CORP-MASSACHUSETTSDBA MICROSEMI-LOWELL |
| 619691-901 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-004-4009
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MINIMUM BREAKDOWN VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CH10.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AS2.5 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.975 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.075 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 37695-619691 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |