NSN 5961-01-005-0352

Part Details | TRANSISTOR

5961-01-005-0352 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 528056, DMS 87023B, RELEASE5987, 2N5653, 528056, 2N5653, 2N5653, 2N5653, 2N5653, 2N5653, 5961-01-005-0352, 01-005-0352, 5961010050352, 010050352

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 18, 197501-005-035220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-005-0352
Part Number Cage Code Manufacturer
52805604901BOONTON ELECTRONICS CORPORATIONDIV BOONTON ELECTRONICS
DMS 87023B16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
RELEASE598780131ELECTRONIC INDUSTRIES ASSOCIATION
2N565380131ELECTRONIC INDUSTRIES ASSOCIATION
52805615770FISCHBACH AND MOORE COMMUNICATIONSDIV OF FISCHBACH AND MOORE INC
2N565304713FREESCALE SEMICONDUCTOR, INC.
2N56531MY79INTERSIL COMMUNICATIONS INC.
2N565334371INTERSIL CORPORATIONDIV NA
2N56535V1P1ON SEMICONDUCTOR CORPORATION
2N565325403PHILIPS CIRCUIT ASSEMBLIES
Technical Data | NSN 5961-01-005-0352
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
POWER RATING PER CHARACTERISTICAB310.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL PLASTIC
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL HEIGHT0.165 INCHES MAXIMUM
OVERALL WIDTH0.205 INCHES MAXIMUM
SPECIFICATION/STANDARD DATA80131-RELESE5987 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION