NSN 5961-01-006-8000

Part Details | TRANSISTOR

5961-01-006-8000 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: DMS 81016B, SRF2454H, MRF305, PH0450, SRF2454H, 3521073010, 352-1073-010, 3521073010, 352-1073-010, J02047, 5961-01-006-8000, 01-006-8000, 5961010068000, 010068000

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 23, 197501-006-800020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-006-8000
Part Number Cage Code Manufacturer
DMS 81016B16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
SRF2454H04713FREESCALE SEMICONDUCTOR, INC.
MRF30504713FREESCALE SEMICONDUCTOR, INC.
PH045050998M/A-COM TECHNOLOGY SOLUTIONS INC.
SRF2454H55NN2MACOM TECHNOLOGY SOLUTIONS INC.DBA M/A-COM
352-1073-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
352-1073-01095105ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS
J0204701281TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES
Technical Data | NSN 5961-01-006-8000
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 33.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
POWER RATING PER CHARACTERISTICAB70.0 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.200 INCHES MAXIMUM
OVERALL DIAMETER0.450 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESHEAT SINK INCLUDED; JUNCTION PATTERN ARRANGEMENT: NPN