Part Details | TRANSISTOR
5961-01-008-1353 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 76507, 26308, 2630-8, 7950731, 795073-1, 5961-01-008-1353, 01-008-1353, 5961010081353, 010081353
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 16, 1975 | 01-008-1353 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-008-1353
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 76507 | 32421 | MICROWAVE SEMICONDUCTOR CORP |
| 2630-8 | 32421 | MICROWAVE SEMICONDUCTOR CORP |
| 795073-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-008-1353
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| POWER RATING PER CHARACTERISTIC | AF8.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 75.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | CERAMIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.900 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.225 INCHES MAXIMUM |
| OVERALL WIDTH | 0.397 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |