Part Details | TRANSISTOR
5961-01-008-6028 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SFE1300H1, 9282091B, 928209-1B, FN3150, F2612, 5961-01-008-6028, 01-008-6028, 5961010086028, 010086028
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 26, 1975 | 01-008-6028 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-008-6028
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SFE1300H1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 928209-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| FN3150 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| F2612 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-01-008-6028
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AK10.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG300.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.110 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |