NSN 5961-01-008-8910

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-01-008-8910 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: 50823168, 5082-3168, 4P3500, D103500000, D10-3500-000, 50823168, 5082-3168, HP50823168, HP5082-3168, 10133127, 3533733010, 353-3733-010, 3533733010, 353-3733-010, 91462176, 5961-01-008-8910, 01-008-8910, 5961010088910, 010088910

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 31, 197501-008-891020589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-008-8910
Part Number Cage Code Manufacturer
5082-316850434AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES
4P350096341COBHAM ADVANCED ELECTRONIC SOLUTIONSINC.
D10-3500-00014304HARRIS CORPORATIONDBA HARRIS RF COMMUNICATION
5082-316828480HEWLETT-PACKARD COMPANYDBA HP
HP5082-316828480HEWLETT-PACKARD COMPANYDBA HP
10133127A486GNIMIKKEISTOKESKUS NCB FINLAND
353-3733-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
353-3733-01095105ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS
91462176F6481THALES SA
Technical Data | NSN 5961-01-008-8910
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
POWER RATING PER CHARACTERISTICAF250.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
OVERALL DIAMETER0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE