Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-009-4967 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 14502003, 14502-003, 5863796, 586379-6, 5863796, 586379-6, S1F4, SIF4, S4F, S1F4400PIV, S1F4-400PIV, S4F, 5961-01-009-4967, 01-009-4967, 5961010094967, 010094967
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 11, 1975 | 01-009-4967 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-009-4967
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 14502-003 | 10138 | ASTRONAUTICS CORPORATION OF AMERICA |
| 586379-6 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 586379-6 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| S1F4 | 14099 | SEMTECH CORPORATION |
| SIF4 | 14099 | SEMTECH CORPORATION |
| S4F | 14099 | SEMTECH CORPORATION |
| S1F4-400PIV | 14099 | SEMTECH CORPORATION |
| S4F | SH879 | SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY |
Technical Data | NSN 5961-01-009-4967
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CC1.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.250 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.128 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |