Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-009-6324 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C122B, C122B, 40867, 5961-01-009-6324, 01-009-6324, 5961010096324, 010096324
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 13, 1975 | 01-009-6324 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-009-6324
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C122B | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| C122B | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
| 40867 | 54590 | RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS |
Technical Data | NSN 5961-01-009-6324
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CG80.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.615 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.420 INCHES MAXIMUM |