Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-009-8039 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5381B, RELEASE 5750, 1N5381B, 1N5381A, 1N5381B, 1N5381B, 352258901241, 5961-01-009-8039, 01-009-8039, 5961010098039, 010098039
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 17, 1975 | 01-009-8039 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-009-8039
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5381B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 5750 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5381B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5381A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5381B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N5381B | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 352258901241 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
Technical Data | NSN 5961-01-009-8039
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 130.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS10.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AG5.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.350 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.145 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELEASE 5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD |