NSN 5961-01-011-5192

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-011-5192 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 790352800, 7903528-00, 6650821, 665-082-1, 6550821, 655-082-1, 5961-01-011-5192, 01-011-5192, 5961010115192, 010115192

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 23, 197501-011-519262108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-011-5192
Part Number Cage Code Manufacturer
7903528-0090536LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN
665-082-112969MICRO USPD INC
655-082-112969MICRO USPD INC
Technical Data | NSN 5961-01-011-5192
Characteristic Specifications
SPECIAL FEATURESCENTER TAP RECTIFIER;PEAK INVERSE VOLTAGE 100V;FORWARD CURRENT SURGE 15O AMP;OUTPUT CURRENT 15 AMP MAX;OPERATING TEMP M65 TO P150 DEG C;GLASS DIODES;EPOXY ENCAPSULATED WITH ALUMINUM FRAME;3 WIRE LOOP TYPE TERMINALS;2.260 IN. MAX LG;0.354 IN. MAX W;0.322 IN. MAX H;TWO 0.175 IN. MAX DIA MTG HOLES 1.880 IN. CENTER TO CENTER;POSITIVE POLARITY;STORAGE TEMP RANGE:M65.0 TO P150.0 DEG CELCIUS