Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-012-2947 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1379800021, 137-98-00021, XC556G2, XC-556-G2, 8527211, 852721-1, 8527211, 852721-1, 8527211, 852721-1, XC556G2, 5961-01-012-2947, 01-012-2947, 5961010122947, 010122947
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 09, 1975 | 01-012-2947 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-012-2947
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 137-98-00021 | 06141 | L3 AVIATION PRODUCTS, INC. |
| XC-556-G2 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 852721-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 852721-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 852721-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| XC556G2 | 53184 | XCITON CORP |
Technical Data | NSN 5961-01-012-2947
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.8 NOMINAL FORWARD VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF40.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AG115.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 105.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| OVERALL LENGTH | 0.340 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |