Part Details | TRANSISTOR
5961-01-012-4269 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 425189P, 4-25189P, 101000270, 101-000270, RELEASE6323, 2N6190, 2N6190, 401608021, 4016080-21, 2N6190, 425189P, 4-25189P, T532011001, 2N6190, 2N6190, 2N6190, 2N6190, 2N6190, 2N6190, 5961-01-012-4269, 01-012-4269, 5961010124269, 010124269
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 11, 1975 | 01-012-4269 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-012-4269
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 4-25189P | A2608 | BASTOGI SISTEMI SPA |
| 101-000270 | 34984 | DATA GENERAL CORPM/S 9S17 |
| RELEASE6323 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N6190 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N6190 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 4016080-21 | 07187 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| 2N6190 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 4-25189P | A0069 | LEONARDO S.P.A. A SECURITY &INFORION SYSTEM DIVISION |
| T532011001 | 36090 | LOCKHEED MARTIN LIBRASCOPECORP |
| 2N6190 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 2N6190 | 33178 | MICROSEMI PPC INC |
| 2N6190 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N6190 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 2N6190 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 2N6190 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-01-012-4269
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB1.00 AMPERES MAXIMUM AND AC5.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB10.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELESE6323 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |