Part Details | TRANSISTOR
5961-01-012-4270 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 14480005, 14480-005, 2N5002, RELEASE5569, 2N5002, 2N5002, 5L.5512.204.29, 2N5002, JAN2N5002, 4509002027, 450900-2027, 5358581, 535858-1, AED0038211, AED003821-1, 2N5002, AED0038211, AED003821-1, 5961-01-012-4270, 01-012-4270, 5961010124270, 010124270
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 11, 1975 | 01-012-4270 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-012-4270
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 14480-005 | 10138 | ASTRONAUTICS CORPORATION OF AMERICA |
| 2N5002 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5569 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5002 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N5002 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 5L.5512.204.29 | D1901 | HENSOLDT SENSORS GMBHDIV SEPS |
| 2N5002 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| JAN2N5002 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 450900-2027 | D4856 | NORTHROP GRUMMAN LITEF GMBHDBA LITEF |
| 535858-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| AED003821-1 | 99595 | SYSTEMES DE CONTROLES GOODRICH LTEE |
| 2N5002 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| AED003821-1 | 11599 | TRIUMPH ENGINE CONTROL SYSTEMS, LLC |
Technical Data | NSN 5961-01-012-4270
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC5.00 AMPERES MAXIMUM AND AB2.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB50.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-59 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 3 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.394 INCHES NOMINAL |
| OVERALL DIAMETER | 0.408 INCHES NOMINAL |
| OVERALL WIDTH ACROSS FLATS | 0.430 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |