Part Details | TRANSISTOR
5961-01-012-8189 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: FN3495, FN3495, U2792, 5153831, 515383-1, 5961-01-012-8189, 01-012-8189, 5961010128189, 010128189
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 18, 1975 | 01-012-8189 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-012-8189
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| FN3495 | 0GCE7 | CANFIELD ELECTRONICS, INC. |
| FN3495 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| U2792 | 15818 | TELCOM SEMICONDUCTOR INC |
| 515383-1 | 08125 | U S DEPT OF TRANSPORTATION FEDERALAVIATION ADMINISTRATION |
Technical Data | NSN 5961-01-012-8189
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -40.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | BS50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.8 WATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | ANGRR23 |