NSN 5961-01-013-0080

Part Details | TRANSISTOR

5961-01-013-0080 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5202, 2N5202, 40046612, 4004661-2, 2N5202, 2N5202, 85AJ139, 5961-01-013-0080, 01-013-0080, 5961010130080, 010130080

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 21, 197501-013-008020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-013-0080
Part Number Cage Code Manufacturer
2N520234156FALKOR PARTNERS, LLCDBA SEMICOA
2N520224444GENERAL SEMICONDUCTOR INDUSTRIES INC
4004661-207187HONEYWELL INTERNATIONAL INC.DBA HONEYWELL
2N520234371INTERSIL CORPORATIONDIV NA
2N520233178MICROSEMI PPC INC
85AJ13921845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-01-013-0080
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB2.00 AMPERES MAXIMUM AND AC4.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB35.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
OVERALL LENGTH0.340 INCHES MAXIMUM
OVERALL DIAMETER0.500 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN