Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER
5961-01-013-7699 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.
Alternate Parts: 247ASC1330003, 247AS-C1330-003, S3BR15, S3BR15, 5961-01-013-7699, 01-013-7699, 5961010137699, 010137699
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 07, 1975 | 01-013-7699 | 62108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-013-7699
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 247AS-C1330-003 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
| S3BR15 | 14099 | SEMTECH CORPORATION |
| S3BR15 | SH879 | SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY |
Technical Data | NSN 5961-01-013-7699
| Characteristic | Specifications |
|---|---|
| SPECIAL FEATURES | SILICON;3-PHASE BRIDGE RECTIFIER;HERMETICALLY SEALED;M55 TO P150 DEG C OPERATING TEMP;1.000 IN. LG;0.420 IN. W;0.180 IN. H;5 TERMINALS;STORAGE TEMP RANGE:M62.0 TO P150.0 DEG CELCIUS |