NSN 5961-01-013-9350

Part Details | TRANSISTOR

5961-01-013-9350 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N6056, 2N6056, RELEASE N0. 6342, 2N6056, 2N6056, 99086152, 5961-01-013-9350, 01-013-9350, 5961010139350, 010139350

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 11, 197501-013-935020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-013-9350
Part Number Cage Code Manufacturer
2N605655464CENTRAL SEMICONDUCTOR CORP.
2N605680131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE N0. 634280131ELECTRONIC INDUSTRIES ASSOCIATION
2N605604713FREESCALE SEMICONDUCTOR, INC.
2N605681349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
99086152F6481THALES SA
Technical Data | NSN 5961-01-013-9350
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
CURRENT RATING PER CHARACTERISTICAC8.00 AMPERES MAXIMUM AND AB120.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG100.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-3
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN
OVERALL LENGTH0.830 INCHES MAXIMUM
OVERALL HEIGHT0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN