Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-014-4993 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: DMS 82067B, MR1265, MR1265FL, MR1265FL, 8582901, 858290-1, 8582901, 858290-1, 8582901, 858290-1, 5961-01-014-4993, 01-014-4993, 5961010144993, 010144993
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 23, 1975 | 01-014-4993 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-014-4993
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 82067B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| MR1265 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MR1265FL | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MR1265FL | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 858290-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 858290-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 858290-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-014-4993
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG650.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 190.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| MOUNTING METHOD | BRACKET AND UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 4 |
| TERMINAL TYPE AND QUANTITY | 1 FLANGE AND 1 TAB, SOLDER LUG |
| OVERALL LENGTH | 3.000 INCHES NOMINAL |
| OVERALL HEIGHT | 1.000 INCHES MAXIMUM |
| OVERALL WIDTH | 3.000 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |