Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-016-5417 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: WG1308, 152057400, 152-0574-00, 152057400, 152-0574-00, 5961-01-016-5417, 01-016-5417, 5961010165417, 010165417
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 13, 1976 | 01-016-5417 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-016-5417
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| WG1308 | 14433 | ITT SEMICONDUCTORS DIV |
| 152-0574-00 | 59873 | SPACELABS-HILLSBORO OPERATIONSSQUIBB VITATEK INC |
| 152-0574-00 | 80009 | TEKTRONIX, INC.DBA TEKTRONIX |
Technical Data | NSN 5961-01-016-5417
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM REVERSE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AG450.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG500.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 80009-152-0574-00 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |