Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-016-8483 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5454B, 1N5454B, RELEASE5880, MILS19500329, MILS19500-329, JAN1N4813A, 5961-01-016-8483, 01-016-8483, 5961010168483, 010168483
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 25, 1976 | 01-016-8483 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-016-8483
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5454B | 12498 | CRYSTALONICS, INC. |
| 1N5454B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5880 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| MILS19500-329 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N4813A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-016-8483
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| POWER RATING PER CHARACTERISTIC | AF400.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5880 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |