NSN 5961-01-017-6023

Part Details | TRANSISTOR

5961-01-017-6023 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: RELEASE5344, 2N4117A, 18550305, 1855-0305, 18550305, 1855-0305, 2N4117A, 2N4117A, 5961-01-017-6023, 01-017-6023, 5961010176023, 010176023

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 11, 197601-017-602320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-017-6023
Part Number Cage Code Manufacturer
RELEASE534480131ELECTRONIC INDUSTRIES ASSOCIATION
2N4117A80131ELECTRONIC INDUSTRIES ASSOCIATION
1855-030528480HEWLETT-PACKARD COMPANYDBA HP
1855-03051LQK8KEYSIGHT TECHNOLOGIES, INC.
2N4117A27014NATIONAL SEMICONDUCTOR CORPORATION
2N4117A17856SILICONIX INCORPORATEDDIV SILICONIX
Technical Data | NSN 5961-01-017-6023
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAC50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5344 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION