NSN 5961-01-019-1059

Part Details | TRANSISTOR

5961-01-019-1059 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 121G334711, 121G3347-1-1, 5961-01-019-1059, 01-019-1059, 5961010191059, 010191059

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 14, 197601-019-105920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-019-1059
Part Number Cage Code Manufacturer
121G3347-1-167177ZENITH ELECTRONICS CORPORATION
Technical Data | NSN 5961-01-019-1059
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC-150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
CURRENT RATING PER CHARACTERISTICACM50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG1.0 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-39
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL DIAMETER0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP