Part Details | TRANSISTOR
5961-01-019-8765 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 66495, 66495, 2000848001, 20-00848-001, 5961-01-019-8765, 01-019-8765, 5961010198765, 010198765
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 20, 1976 | 01-019-8765 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-019-8765
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 66495 | 1MY79 | INTERSIL COMMUNICATIONS INC. |
| 66495 | 34371 | INTERSIL CORPORATIONDIV NA |
| 20-00848-001 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-019-8765
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -0.2 MINIMUM DRAIN TO SOURCE VOLTAGE AND 18.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 22.5 MAXIMUM DRAIN TO GATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG330.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |