NSN 5961-01-021-6660

Part Details | TRANSISTOR

5961-01-021-6660 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N2635, 2N2635, 5961PL1392194, 64A7A1351, 64A7A135-1, 2N2635, 5961-01-021-6660, 01-021-6660, 5961010216660, 010216660

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 17, 197601-021-666020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-021-6660
Part Number Cage Code Manufacturer
2N263504713FREESCALE SEMICONDUCTOR, INC.
2N263553399GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS
5961PL13921949009HINSPEKTORAT WSPARCIA SIL ZBROJNYCH
64A7A135-110001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
2N263501295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-01-021-6660
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP