Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-022-4910 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JAN1N5475B, MILS19500436, MILS19500-436, JAN1N5475B, V82, 5961-01-022-4910, 01-022-4910, 5961010224910, 010224910
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 29, 1976 | 01-022-4910 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-022-4910
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN1N5475B | 12498 | CRYSTALONICS, INC. |
| MILS19500-436 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N5475B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| V82 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-022-4910
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF250.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AG400.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |