NSN 5961-01-023-8515

Part Details | TRANSISTOR

5961-01-023-8515 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5464, RELEASE5811, 2N5464, 2N5464, 2N5464, 2N5464, 2N5464, 2N5464, 5961-01-023-8515, 01-023-8515, 5961010238515, 010238515

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 26, 197601-023-851520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-023-8515
Part Number Cage Code Manufacturer
2N546480131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE581180131ELECTRONIC INDUSTRIES ASSOCIATION
2N546404713FREESCALE SEMICONDUCTOR, INC.
2N546409214GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2N546434371INTERSIL CORPORATIONDIV NA
2N546427014NATIONAL SEMICONDUCTOR CORPORATION
2N546417856SILICONIX INCORPORATEDDIV SILICONIX
2N546421845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-01-023-8515
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
POWER RATING PER CHARACTERISTICAB310.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL PLASTIC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL HEIGHT0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL WIDTH0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SPECIFICATION/STANDARD DATA80131-RELESE5811 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION