NSN 5961-01-023-8517

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-023-8517 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 652427, 652-427, 3536525010, 353-6525-010, 3536525010, 353-6525-010, SA2264, 5961-01-023-8517, 01-023-8517, 5961010238517, 010238517

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 26, 197601-023-851762108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 3 PHASE

Cross Reference | NSN 5961-01-023-8517
Part Number Cage Code Manufacturer
652-42712969MICRO USPD INC
353-6525-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
353-6525-01095105ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS
SA226414099SEMTECH CORPORATION
Technical Data | NSN 5961-01-023-8517
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 PEAK INVERSE VOLTAGE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC110.00 AMPERES PEAK FORWARD SURGE CURRENT
MOUNTING METHOD THREADED HOLE
TERMINAL TYPE AND QUANTITY5 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 3 PHASE
OPERATING TEMP RANGE-55.0 TO +125.0 DEG CELSIUS
OVERALL LENGTH1.500 INCHES NOMINAL
OVERALL WIDTH0.500 INCHES NOMINAL
OVERALL HEIGHT0.660 INCHES NOMINAL