NSN 5961-01-023-9953

Part Details | TRANSISTOR

5961-01-023-9953 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: SD210EE, 1291304, 1291-304, G3903141, G390314-1, 18550647, 1855-0647, SD210DE, SD210DE, SD210, SDF9210, 5961-01-023-9953, 01-023-9953, 5961010239953, 010239953

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 02, 197601-023-995320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-023-9953
Part Number Cage Code Manufacturer
SD210EE54991ASCHBACHER AND ASSOCIATES INC
1291-30472314BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I
G390314-124930HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, RADAR
1855-064728480HEWLETT-PACKARD COMPANYDBA HP
SD210DE12954MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI
SD210DE18324PHILIPS SEMICONDUCTORS INC
SD21018324PHILIPS SEMICONDUCTORS INC
SDF921021845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-01-023-9953
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAD50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF1.2 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.195 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE