Part Details | TRANSISTOR
5961-01-024-1009 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 3N167, 2000704001, 20-00704-001, MU579, 5961-01-024-1009, 01-024-1009, 5961010241009, 010241009
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 04, 1976 | 01-024-1009 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-024-1009
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 3N167 | 14936 | GENERAL SEMICONDUCTOR INC |
| 20-00704-001 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
| MU579 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-024-1009
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AK0.01 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG222.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |