NSN 5961-01-024-2139

Part Details | TRANSISTOR

5961-01-024-2139 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: E111, P58005762018, P58-005762-018, J11118, J111-18, E111, 450007, P58005762018, P58-005762-018, 5961-01-024-2139, 01-024-2139, 5961010242139, 010242139

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 06, 197601-024-213920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-024-2139
Part Number Cage Code Manufacturer
E11127014NATIONAL SEMICONDUCTOR CORPORATION
P58-005762-01863103PULTZ JOHN M CO INC
J111-1817856SILICONIX INCORPORATEDDIV SILICONIX
E11117856SILICONIX INCORPORATEDDIV SILICONIX
45000752427SOUTHCOM INTERNATIONAL INC
P58-005762-01832791THOMSON MULTIMEDIA BROADCASTSOLUTIONS INC
Technical Data | NSN 5961-01-024-2139
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAK50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG350.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL PLASTIC
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL DIAMETER0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM