Part Details | TRANSISTOR
5961-01-025-6193 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SC596100932, SC5961-0093-2, 2N6575, DTS519, DTS-519, 2N6575, 2N6575, STI519, STI-519, DTS519, DTS-519, 2N6575, STD1138, 105SEB264, 122059, 5961-01-025-6193, 01-025-6193, 5961010256193, 010256193
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 06, 1976 | 01-025-6193 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-025-6193
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SC5961-0093-2 | 12115 | DRS ICAS, LLC |
| 2N6575 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| DTS-519 | 16758 | GENERAL MOTORS CORPDELCO ELECTRONICS DIV |
| 2N6575 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 2N6575 | 14321 | PD & E ELECTRONICS LLC |
| STI-519 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
| DTS-519 | 31338 | SEMITRONICS CORP |
| 2N6575 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| STD1138 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 105SEB264 | 21845 | SOLITRON DEVICES, INC. |
| 122059 | 29019 | TECHNOLOGY DYNAMICS, INC.DBA NOVA ELECTRIC |
Technical Data | NSN 5961-01-025-6193
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 700.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | BE10.00 AMPERES MAXIMUM AND BD4.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF125.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.308 INCHES MINIMUM AND 1.385 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.660 INCHES MINIMUM AND 0.798 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MINIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| END ITEM IDENTIFICATION | AN/TPB-1C RADAR BOMB DIR SET |
