NSN 5961-01-025-7560

Part Details | TRANSISTOR

5961-01-025-7560 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: NES8068, 5881502, 588150-2, 5881502, 588150-2, 5881502, 588150-2, 65114, 5881502, 588150-2, 5961-01-025-7560, 01-025-7560, 5961010257560, 010257560

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 08, 197601-025-756020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-025-7560
Part Number Cage Code Manufacturer
NES806843611MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE
588150-254X10RAYTHEON COMPANYDBA RAYTHEON
588150-249956RAYTHEON COMPANYDBA RAYTHEON
588150-23B150RAYTHEON COMPANYDBA RAYTHEON
6511454590RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS
588150-231338SEMITRONICS CORP
Technical Data | NSN 5961-01-025-7560
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB7.00 AMPERES MAXIMUM AND AC20.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB110.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
OVERALL LENGTH0.200 INCHES MAXIMUM
OVERALL DIAMETER0.875 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN