NSN 5961-01-026-6118

Part Details | TRANSISTOR

5961-01-026-6118 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5484, 2N5484, RELEASE 5795, 2N5484, 2N5484, 2N5484, 1655302, 165530-2, 2N5484, 4901054840, 4901-05-4840, 5961-01-026-6118, 01-026-6118, 5961010266118, 010266118

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 28, 197601-026-611820588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-026-6118
Part Number Cage Code Manufacturer
2N548455464CENTRAL SEMICONDUCTOR CORP.
2N548480131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE 579580131ELECTRONIC INDUSTRIES ASSOCIATION
2N548404713FREESCALE SEMICONDUCTOR, INC.
2N548427014NATIONAL SEMICONDUCTOR CORPORATION
2N54845V1P1ON SEMICONDUCTOR CORPORATION
165530-249956RAYTHEON COMPANYDBA RAYTHEON
2N548421845SOLITRON DEVICES, INC.
4901-05-484023338WAVETEK U S INCDIV OF WAVETEK CORP
Technical Data | NSN 5961-01-026-6118
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO GATE VOLTAGE
CURRENT RATING PER CHARACTERISTICAK10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF310.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL PLASTIC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL HEIGHT0.165 INCHES MAXIMUM
OVERALL WIDTH0.205 INCHES MAXIMUM
SPECIFICATION/STANDARD DATA80131-RELESE5795 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION