Part Details | TRANSISTOR
5961-01-027-2125 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: BF167, ST5526, BF167, 5961-01-027-2125, 01-027-2125, 5961010272125, 010272125
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 10, 1976 | 01-027-2125 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-027-2125
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BF167 | K0577 | BRITISH SAROZAL LTD |
| ST5526 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
| BF167 | 25088 | SIEMENS CORP |
Technical Data | NSN 5961-01-027-2125
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC25.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF130.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 13.50 MILLIMETERS NOMINAL |
| TERMINAL CIRCLE DIAMETER | 2.54 MILLIMETERS NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 5.20 MILLIMETERS NOMINAL |
| OVERALL DIAMETER | 5.50 MILLIMETERS NOMINAL |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |