Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-027-4290 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C106F41, C106F41, 14500024001, 14500024-001, 326781, 5961-01-027-4290, 01-027-4290, 5961010274290, 010274290
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 16, 1976 | 01-027-4290 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-027-4290
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C106F41 | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| C106F41 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 14500024-001 | 17479 | HONEYWELL INCCOMMERCIAL DIV |
| 326781 | 80145 | LFE INSTRUMENTSA MARK IV CO |
Technical Data | NSN 5961-01-027-4290
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | D+4.000 AMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 115.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.390 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.187 INCHES MAXIMUM |
| OVERALL WIDTH | 0.320 INCHES MAXIMUM |