Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-028-0011 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 550PB140, T720145504DN, 5961-01-028-0011, 01-028-0011, 5961010280011, 010280011
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 23, 1976 | 01-028-0011 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-028-0011
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 550PB140 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| T720145504DN | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-01-028-0011
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | DQ550.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-200AC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 10.000 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 INSULATED WIRE LEAD W/TERMINAL LUG |
| OVERALL LENGTH | 1.040 INCHES NOMINAL |
| OVERALL DIAMETER | 2.250 INCHES NOMINAL |