Part Details | TRANSISTOR
5961-01-028-1077 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 200952002, 200952-002, 324990122216, 324-990122-216, SCA13690, SRF2239H1, 5961PL1392624, JANTX2N4957, 2N4957, MILS19500426, MIL-S-19500/426, MILPRF19500426, MIL-PRF-19500/426, JANTX2N4957, 10133158, 1712378722, 17-123787-22, 1A20855H01, 9288751B, 928875-1B, 72302542, 723025-42, 5961-01-028-1077, 01-028-1077, 5961010281077, 010281077
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 24, 1976 | 01-028-1077 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-028-1077
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 200952-002 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 324-990122-216 | 38753 | CMC ELECTRONICS INC |
| SCA13690 | 34156 | FALKOR PARTNERS, LLCDBA SEMICOA |
| SRF2239H1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 5961PL1392624 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| JANTX2N4957 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 2N4957 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-S-19500/426 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/426 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX2N4957 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 10133158 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 17-123787-22 | 28815 | NORTHROP GRUMMAN SPACE & MISSIONSYSTEMS CORP. |
| 1A20855H01 | 97942 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS |
| 928875-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 723025-42 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-028-1077
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC30.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 426 GOVERNMENT SPECIFICATION |
| PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE OPTION GOLD |