NSN 5961-01-029-1010

Part Details | TRANSISTOR

5961-01-029-1010 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 958111002, 958111-002, 1534003001, 153-4003-001, 1958111002, 1-958111-002, 142014, 142-014, 5001180, 5001-180, J17518, J175-18, E175, 5961-01-029-1010, 01-029-1010, 5961010291010, 010291010

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 16, 197601-029-101020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-029-1010
Part Number Cage Code Manufacturer
958111-00288869EATON CORPELECTRONIC INSTRUMENTATION DIV
153-4003-00188869EATON CORPELECTRONIC INSTRUMENTATION DIV
1-958111-00288869EATON CORPELECTRONIC INSTRUMENTATION DIV
142-01427970GE INFRASTRUCTURE SENSING, LLCDBA GE SENSING & INSPECTION
5001-18005869RAYTHEON COMPANYDBA RAYTHEON
J175-1817856SILICONIX INCORPORATEDDIV SILICONIX
E17517856SILICONIX INCORPORATEDDIV SILICONIX
Technical Data | NSN 5961-01-029-1010
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICBW1.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG350.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL PLASTIC
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL DIAMETER0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM