NSN 5961-01-029-1024

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-01-029-1024 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: SZ51202H2, SZ51202H-2, DT700306B2, DT700306B-2, 28873902, 2887390-2, 28873902, 2887390-2, 28873902, 2887390-2, 28873902, 2887390-2, 5961-01-029-1024, 01-029-1024, 5961010291024, 010291024

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 16, 197601-029-102420589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-029-1024
Part Number Cage Code Manufacturer
SZ51202H-204713FREESCALE SEMICONDUCTOR, INC.
DT700306B-212954MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI
2887390-210001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
2887390-254X10RAYTHEON COMPANYDBA RAYTHEON
2887390-249956RAYTHEON COMPANYDBA RAYTHEON
2887390-23B150RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-01-029-1024
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC13.4 MAXIMUM EMITTER TO BASE, RMS
CURRENT RATING PER CHARACTERISTICAS4.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF400.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.300 INCHES MAXIMUM
OVERALL DIAMETER0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
TEST DATA DOCUMENT10001-2887390 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)