NSN 5961-01-029-2682

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-029-2682 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: NBS12400, NBS12-400, 75MB3L, 1579525, K5951, K595-1, 5961-01-029-2682, 01-029-2682, 5961010292682, 010292682

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 16, 197601-029-268262108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-029-2682
Part Number Cage Code Manufacturer
NBS12-40051182DIODES INC
75MB3L81483INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R
157952510001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
K595-121845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-01-029-2682
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC300.0 REVERSE VOLTAGE, PEAK
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC75.00 AMPERES PEAK FORWARD SURGE CURRENT
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY4 QUICK DISCONNECT, MALE
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH1.115 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
OVERALL WIDTH1.115 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
OVERALL HEIGHT0.700 INCHES MINIMUM AND 1.250 INCHES MAXIMUM