NSN 5961-01-029-7517

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-01-029-7517 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: MA43593, 50820359, 5082-0359, 28886951, 2888695-1, 28886951, 2888695-1, 28886951, 2888695-1, 28886951, 2888695-1, MA43593, 5961-01-029-7517, 01-029-7517, 5961010297517, 010297517

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 21, 197601-029-751720589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-029-7517
Part Number Cage Code Manufacturer
MA4359396341COBHAM ADVANCED ELECTRONIC SOLUTIONSINC.
5082-035928480HEWLETT-PACKARD COMPANYDBA HP
2888695-110001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
2888695-154X10RAYTHEON COMPANYDBA RAYTHEON
2888695-149956RAYTHEON COMPANYDBA RAYTHEON
2888695-13B150RAYTHEON COMPANYDBA RAYTHEON
MA43593DG438SEMIC RF ELECTRONIC GMBH
Technical Data | NSN 5961-01-029-7517
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC1.0 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC AND 65.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
CURRENT RATING PER CHARACTERISTICAF350.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF667.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL DIAMETER0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
TEST DATA DOCUMENT10001-2888695 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)