NSN 5961-01-029-9161

Part Details | TRANSISTOR

5961-01-029-9161 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: MEM556002, MEM556-002, 28873832, 2887383-2, 28873832, 2887383-2, 28873832, 2887383-2, SFC5201, 5961-01-029-9161, 01-029-9161, 5961010299161, 010299161

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 25, 197601-029-916120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-029-9161
Part Number Cage Code Manufacturer
MEM556-00214936GENERAL SEMICONDUCTOR INC
2887383-210001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
2887383-23B150RAYTHEON COMPANYDBA RAYTHEON
2887383-249956RAYTHEON COMPANYDBA RAYTHEON
SFC520101295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-01-029-9161
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC-50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICADM20.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF100.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
TEST DATA DOCUMENT10001-2887383 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)