NSN 5961-01-030-2085

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-030-2085 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 6521070, 652-1070, 9254111B, 925411-1B, SA2577, SA6156, SA2577, 5961-01-030-2085, 01-030-2085, 5961010302085, 010302085

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 30, 197601-030-208562108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-030-2085
Part Number Cage Code Manufacturer
652-107012969MICRO USPD INC
925411-1B82577RAYTHEON COMPANYDBA RAYTHEON
SA257782577RAYTHEON COMPANYDBA RAYTHEON
SA615614099SEMTECH CORPORATION
SA257714099SEMTECH CORPORATION
Technical Data | NSN 5961-01-030-2085
Characteristic Specifications
MATERIAL SILICON
TERMINAL TYPE AND QUANTITY4 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH0.280 INCHES MAXIMUM
OVERALL DIAMETER0.890 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACES SILVER