Part Details | TRANSISTOR
5961-01-030-4101 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: CP633, ITS3703, SF58005, 3521004010, 352-1004-010, 3521004010, 352-1004-010, FN2332, 5961-01-030-4101, 01-030-4101, 5961010304101, 010304101
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 04, 1976 | 01-030-4101 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-030-4101
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CP633 | 12498 | CRYSTALONICS, INC. |
| ITS3703 | 32293 | INTERSIL INCSUB OF GENERAL ELECTRIC CO |
| SF58005 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 352-1004-010 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 352-1004-010 | 95105 | ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS |
| FN2332 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-030-4101
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD0.60 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG1.2 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | SOURCE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.210 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |