Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-030-4286 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5814, 615409901, 615409-901, 6154091, 615409-1, SA6891E, 5961-01-030-4286, 01-030-4286, 5961010304286, 010304286
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 05, 1976 | 01-030-4286 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-030-4286
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5814 | 12969 | MICRO USPD INC |
| 615409-901 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| 615409-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| SA6891E | 14099 | SEMTECH CORPORATION |
Technical Data | NSN 5961-01-030-4286
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CC20.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-4 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.437 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |