Part Details | TRANSISTOR
5961-01-030-8676 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6661, 2N6661, RELEASE 6675D, 2N6661, VMP22, VMP-22, 3522 500 42598, 3522 500 29252, 5961-01-030-8676, 01-030-8676, 5961010308676, 010308676
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 12, 1976 | 01-030-8676 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-030-8676
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6661 | K0577 | BRITISH SAROZAL LTD |
| 2N6661 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 6675D | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N6661 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| VMP-22 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 3522 500 42598 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
| 3522 500 29252 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
Technical Data | NSN 5961-01-030-8676
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 90.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD1.50 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG4.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.360 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |