Part Details | TRANSISTOR
5961-01-030-9546 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 35826E, HP35826E, 35826E, SMC8010511, SM-C-801051-1, 5961-01-030-9546, 01-030-9546, 5961010309546, 010309546
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 15, 1976 | 01-030-9546 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-030-9546
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 35826E | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| HP35826E | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 35826E | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. |
| SM-C-801051-1 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-01-030-9546
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 27.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC35.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF700.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 2.500 INCHES NOMINAL |
| OVERALL HEIGHT | 0.050 INCHES NOMINAL |
| OVERALL WIDTH | 2.500 INCHES NOMINAL |
| END ITEM IDENTIFICATION | ANFPS110 RADAR MOD,GENERAL DYNAMICS CORP |