Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-032-0468 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MV1405, MV1405H, MV1405, CD0009001, CD0009-001, 480340101405, 4803401-01405, G1346923, G134692-3, G1346923, G134692-3, 99136966, 5961-01-032-0468, 01-032-0468, 5961010320468, 010320468
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 05, 1976 | 01-032-0468 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-032-0468
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MV1405 | 4U751 | ADVANCED SEMICONDUCTOR,INC.DBA A S I |
| MV1405H | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MV1405 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| CD0009-001 | 22915 | NORTHROP GRUMMAN CORPELECTRONIC SYSTEMS DEFENSIVE SYSTEM |
| 4803401-01405 | 06994 | OCEAN APPLIED RESEARCH CORP |
| G134692-3 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G134692-3 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 99136966 | F6481 | THALES SA |
Technical Data | NSN 5961-01-032-0468
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 12.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| POWER RATING PER CHARACTERISTIC | AF400.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | 0-1701/GR |