NSN 5961-01-032-4959

Part Details | TRANSISTOR

5961-01-032-4959 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: RMT2502G, RMT2502G, 3521059020, 352-1059-020, PT9694, 5961-01-032-4959, 01-032-4959, 5961010324959, 010324959

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 15, 197601-032-495920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-032-4959
Part Number Cage Code Manufacturer
RMT2502G49956RAYTHEON COMPANYDBA RAYTHEON
RMT2502G3B150RAYTHEON COMPANYDBA RAYTHEON
352-1059-02013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
PT969401281TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES
Technical Data | NSN 5961-01-032-4959
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICAC500.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF10.0 WATTS MAXIMUM
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE EMITTER
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN