Part Details | TRANSISTOR
5961-01-032-7676 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6002, RELEASE6174, 807479, 2N6002, 2N6002, 5961-01-032-7676, 01-032-7676, 5961010327676, 010327676
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 21, 1976 | 01-032-7676 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-032-7676
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6002 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE6174 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 807479 | 07342 | NAI TECHNOLOGIES INC |
| 2N6002 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
| 2N6002 | 31338 | SEMITRONICS CORP |
Technical Data | NSN 5961-01-032-7676
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | BF10.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG400.0 MILLIWATTS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL HEIGHT | 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELEASE 6174 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD |